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       Low VF Low IR SMD Schottky Barrier Rectifiers Dimensions in inches and (millimeter) DO-214AC (SMA) Reverse V oltage: 20 to 200 Volts Forward Current: 1.0 Amp RoHS Device Page 1 REV:A CDBA120LR-HF Thru. CDBA1200LR-HF QW-JL022 Comchip Technology CO., LTD. 0.067 (1.70) 0.047 (1.20) 0.114 (2.90) 0.083 (2.10) 0.181 (4.60) 0.157 (4.00) 0.008(0.20) 0.004(0.10) Features -Ultra high-speed switching. Mechanical data -Case: Molded plastic, DO-214AC / SMA -T erminals: solderable per MIL-STD-750, method 2026. -Polarity: Indicated by cathode band. -W eight: 0.055 grams -Low Profile surface mount applications in order to optimize board space. -Low power loss, high ef ficiency. -Hight current capability , low forward voltage drop. -Hight surge capability . -Guardring for overvoltage protection. -Epoxy: UL94-V0 rate flame retardant. -Silicon epitaxial planar chip,metal silicon junction. CDBA Symbol 120LR-HF 140LR-HF 160LR-HF 1100LR-HF 1150LR-HF 1200LR-HF Max. Repetitive peak reverse voltage Max. DC blocking voltage Max. RMS voltage CDBA CDBA CDBA CDBA Units Parameter VRRM VDC VRMS 20 20 14 40 40 28 60 60 42 100 100 70 150 150 105 V V V CDBA 200 200 140 Max. Instantaneous forward voltage @1.0A, TA=25°C VF 0.40 0.45 0.55 0.75 0.82 V 0.85 Operating Temperature TJ -50 to +150 -50 to +175 °C Forward surge current Reverse Current Storage temperature A A mA Parameter Conditions on rate load (JEDEC method) 8.3ms single half sine-wave superimposed Forward rectified current see Fig.1 Thermal Resistance Diode Junction capacitance VR =V RRM TA=25°C VR =V RRM TA=100°C f=1MHZ and applied 4V DC reverse V oltage Junction to ambient Symbol IO IFSM IR RθJA CJ TSTG IR MIN. TYP . MAX. mA °C/W pF °C 1.0 50 0.5 20 88 120 -50 +175 Units 0.012 (0.30) TYP. 0.209 (5.30) 0.185 (4.70) 0.061 (1.55) 0.030 (0.75) 0.098 (2.50) 0.067 (1.70) Halogen free Maximum Ratings and Electrical Characteristics Ratings at Ta=25°C unless otherwise noted. Single phase, half wave, 60Hz, resistive or inductive loaded. For capacitive load, derate current by 20% . |